The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Jun. 23, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Matthew Donofrio, Raleigh, NC (US);

John Edmond, Durham, NC (US);

Harshad Golakia, Morrisville, NC (US);

Assignee:

WOLFSPEED, INC., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/06 (2014.01); B23K 26/08 (2014.01); B23K 26/359 (2014.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/82 (2006.01); H01L 29/16 (2006.01); B23K 26/00 (2014.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0006 (2013.01); B23K 26/0665 (2013.01); B23K 26/0853 (2013.01); B23K 26/0876 (2013.01); B23K 26/359 (2015.10); H01L 21/02013 (2013.01); H01L 21/02021 (2013.01); H01L 21/268 (2013.01); H01L 21/30625 (2013.01); H01L 21/67092 (2013.01); H01L 21/67115 (2013.01); H01L 21/6835 (2013.01); H01L 21/6838 (2013.01); H01L 21/8213 (2013.01); H01L 29/1608 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08);
Abstract

A method for processing a crystalline substrate to form multiple patterns of subsurface laser damage facilitates subsequent fracture of the substrate to yield first and second substrate portions of reduced thickness. Multiple (e.g., two, three, or more) groups of parallel lines of multiple subsurface laser damage patterns may be sequentially interspersed with one another, with at least some lines of different groups not crossing one another. Certain implementations include formation of multiple subsurface laser damage patterns including groups of parallel lines that are non-parallel to one another, but with each line remaining within ±5 degrees of perpendicular to the <110> direction of a hexagonal crystal structure of a material of the substrate. Further methods involve formation of initial and subsequent subsurface laser damage patterns that are centered at different depths within an interior of a substrate, with the subsurface laser damage patterns being registered with one another and having vertical extents that are overlapping.


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