The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Mar. 22, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chia-Wen Wang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H10B 43/30 (2023.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A semiconductor device includes a substrate having thereon at least one active area and at least one trench isolation region adjacent to the at least one active area. A charge trapping structure is disposed on the at least one active area and at least one trench isolation region. At least one divot is disposed in the at least one trench isolation region adjacent to the charge trapping structure. A silicon oxide layer is disposed in the at least one divot. A gate oxide layer is disposed on the at least one active area around the charge trapping structure.