The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Jul. 08, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Hang-Ting Lue, Hsinchu, TW;

Wei-Chen Chen, Taoyuan County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H10B 43/10 (2023.01); H10B 43/30 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 29/0649 (2013.01); H01L 29/42344 (2013.01); H10B 43/10 (2023.02); H10B 43/30 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract

A semiconductor device includes a stack formed on a substrate and memory strings penetrating the stack along a first direction. The stack includes conductive layers and insulating layers that alternately stacked. Each of the memory strings includes a channel layer, a memory structure, a first conductive pillar and a second conductive pillar. The channel layer, the first conductive pillar and the second conductive pillar extend along a first direction. The memory structure is disposed between the stack and the channel layer. The first conductive pillar and the second conductive pillar are electrically isolated from each other, and are respectively coupled to a first portion and a second portion of the channel layer. The first portion is opposite to the second portion. The first portion is surrounded by the memory structure, and the second portion is exposed from the memory structure.


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