The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Nov. 20, 2020
Applicant:

Corning Incorporated, Corning, NY (US);

Inventors:

Robert Alan Bellman, Ithaca, NY (US);

Indrajit Dutta, Horseheads, NY (US);

Yi-Cheng Hsieh, Horseheads, NY (US);

Toshihiko Ono, Corning, NY (US);

Nicholas James Smith, Port Matilda, PA (US);

Assignee:

CORNING INCORPORATED, Corning, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/15 (2006.01); H01L 23/00 (2006.01); C03C 15/00 (2006.01); C03C 23/00 (2006.01); C03C 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/15 (2013.01); C03C 15/00 (2013.01); C03C 21/002 (2013.01); C03C 23/0075 (2013.01); H01L 23/562 (2013.01); Y10T 428/24364 (2015.01); Y10T 428/24479 (2015.01);
Abstract

A glass or glass-ceramic carrier substrate, the substrate having undergone at least one complete cycle of a semiconductor fabrication process and having also undergone a reclamation process following the end of the semiconductor fabrication process; the glass or glass-ceramic carrier substrate comprising at least one of the following properties: (i) a coefficient of thermal expansion of less than 13 ppm/° C.; (ii) a Young's Modulus of 70 GPa to 150 GPa; (iii) an IR transmission of greater than 80% at a wavelength of 1064 nm; (iv) a UV transmission of greater than 20% at a wavelength of 255 nm to 360 nm; (v) a thickness tolerance within the same range as the thickness tolerance of the carrier substrate before undergoing at least one complete cycle of the semiconductor fabrication process; (vi) a total thickness variation of less than 2.5 μm; (vii) a failure strength of greater than 80 MPa using a 4-point-bending test; (viii) a pre-shape of 50 μm to 300 μm.


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