The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Feb. 17, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Ming-Shan Ho, Hsinchu, TW;
Ying-Ting Lin, Hsinchu County, TW;
Chung-Yi Luo, Hsinchu County, TW;
Kuo-Cheng Chou, Hsinchu County, TW;
Cheng-Hsiao Lai, Chiayi County, TW;
Ming-Jen Chang, Kaohsiung, TW;
Yung-Tsai Hsu, Hsinchu County, TW;
Cheng-Chieh Cheng, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.