The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Mar. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventor:

Jau-Yi Wu, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); H10N 70/231 (2023.02); H10N 70/8828 (2023.02); G11C 2013/008 (2013.01); H10N 70/8413 (2023.02);
Abstract

In some embodiments, the present disclosure relates a phase change random access memory device that includes a phase change material (PCM) layer disposed between bottom and top electrodes. A controller circuit is coupled to the bottom and top electrodes and is configured to perform a first reset operation by applying a signal at a first amplitude across the PCM layer for a first time period and decreasing the signal from the first amplitude to a second amplitude for a second time period; and to perform a second reset operation by applying the signal at a third amplitude across the PCM layer for a third time period and decreasing the signal from the third amplitude to a fourth amplitude for a fourth time period greater than the second time period. After the fourth time period, the PCM layer has a percent crystallinity greater than the PCM layer after the second time period.


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