The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Oct. 31, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Heng Wu, Santa Clara, CA (US);
Ruilong Xie, Niskayuna, NY (US);
Nanbo Gong, White Plains, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8613 (2023.02); H10B 63/00 (2023.02); H10N 70/063 (2023.02); H10N 70/068 (2023.02); H10N 70/231 (2023.02); H10N 70/8828 (2023.02);
Abstract
Phase change memory devices and methods of forming the same include forming a fin structure from a first material. A phase change memory cell is formed around the fin structure, using a phase change material that includes two solid state phases at an operational temperature.
Wu, Heng. (2023). Pcm cell with resistance drift correction (U.S. Patent No. 11818971). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11818971
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile