The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Jun. 13, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Chao Lin, Hsinchu, TW;
Yuan-Tien Tu, Chiayi County, TW;
Shao-Ming Yu, Hsinchu County, TW;
Tung-Ying Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A phase change random access memory (PCRAM) device includes a memory cell overlying an inter-metal dielectric (IMD) layer, a protection coating, and a first sidewall spacer. The memory cell includes a bottom electrode, a top electrode and a phase change element between the top electrode and the bottom electrode. The protection coating is on an outer sidewall of the phase change element. The first sidewall spacer is on an outer sidewall of the protection coating. The first sidewall spacer has a greater nitrogen atomic concentration than the protection coating.