The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Aug. 05, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Da-Jun Lin, Kaohsiung, TW;
Tai-Cheng Hou, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Ting-An Chien, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H10N 50/01 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/00 (2023.02); H10N 50/80 (2023.02);
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a top electrode on the MTJ, a trapping layer in the top electrode for trapping hydrogen, a first inter-metal dielectric (IMD) layer on the MTJ, and a first metal interconnection in the first IMD layer and on the top electrode. Preferably, a top surface of the trapping layer is lower than a bottom surface of the first IMD layer.