The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Mar. 04, 2022
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Hsueh-Wei Chen, Hsinchu County, TW;
Woan-Yun Hsiao, Hsinchu County, TW;
Wei-Ren Chen, Hsinchu County, TW;
Wein-Town Sun, Hsinchu County, TW;
Assignee:
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H10B 41/70 (2023.01); H10B 41/35 (2023.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H10B 41/70 (2023.02); G11C 16/045 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H10B 41/35 (2023.02);
Abstract
An erasable programmable single-poly non-volatile memory cell and an associated array structure are provided. In the memory cell of the array structure, the assist gate region is composed at least two plate capacitors. Especially, the assist gate region at least contains a poly/poly plate capacitor and a metal/poly plate capacitor. The structures and the fabricating processes of the plate capacitors are simple. In addition, the uses of the plate capacitors can effectively reduce the size of the memory cell.