The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Nov. 11, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Toshiki Hikosaka, Kawasaki, JP;

Jumpei Tajima, Mitaka, JP;

Shinya Nunoue, Ichikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/207 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/207 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

A semiconductor device is provided, including: a substrate; and a first semiconductor layer including magnesium and Al/GaN (0≤x1<1), the first semiconductor layer including a first region, a second region, and a third region, the first region being between the substrate and the third region, the second region being between the first region and the third region, a first concentration of magnesium in the first region being greater than a third concentration of magnesium in the third region, a second concentration of magnesium in the second region decreasing along a first orientation, the first orientation being from the substrate toward the first semiconductor layer, and the first region not including carbon, or a concentration of carbon in the first region being less than the concentration of carbon in the third region.


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