The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

May. 02, 2022
Applicant:

Shibuya Corporation, Kanazawa, JP;

Inventor:

Masato Kitagawa, Kanazawa, JP;

Assignee:

SHIBUYA CORPORATION, Kanazawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 3/08 (2006.01); B23K 1/005 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/75 (2013.01); B23K 1/0056 (2013.01); B23K 3/08 (2013.01); B23K 2101/40 (2018.08); H01L 2224/75261 (2013.01); H01L 2224/75745 (2013.01); H01L 2224/75984 (2013.01);
Abstract

A bonding apparatus provided with a gas supplying unit for causing an inert gas to be sprayed from a spray aperture provided adjacent to a holding section of the bonding head. The spray aperture is provided so as to surround the holding section of the bonding head, in which a portion of the slits is a wide slit set to a higher jet flow rate of the inert gas than narrow slits of another portion, and the inert gas sprayed from the wide slit and the narrow slits forms an air curtain that surrounds the bonding portion between the semiconductor chip and the substrate. The inert gas sprayed from the wide slit forms a flow that passes between the semiconductor chip and the substrate.


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