The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Aug. 29, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Susmit Singha Roy, Mountain View, CA (US);
Kelvin Chan, San Ramon, CA (US);
Hien Minh Le, San Jose, CA (US);
Sanjay Kamath, Fremont, CA (US);
Abhijit Basu Mallick, Fremont, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.