The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Aug. 18, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Rumin Ji, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/46 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/12005 (2013.01); G11C 29/46 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01);
Abstract

A circuit for detecting an anti-fuse memory cell state includes a current providing module connected to a first node and used to provide constant current; an anti-fuse memory cell array connected to the first node and including at least one bit line, the at least one bit line is connected to a plurality of anti-fuse memory cells and the first node; and a comparator, a first input end of the comparator is connected to the first node and a second input end of the comparator is connected to a first reference voltage, and used to detect a storage state of an anti-fuse memory cell to be tested in the anti-fuse memory cell array.


Find Patent Forward Citations

Ji, Rumin. (2023). Circuit for detecting anti-fuse memory cell state and memory (U.S. Patent No. 11817159). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11817159

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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