The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Apr. 18, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yun-Yuan Wang, Kaohsiung, TW;

Cheng-Hsien Lu, Taoyuan, TW;

Ming-Hsiu Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/06 (2006.01); G11C 8/08 (2006.01); G11C 7/12 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0646 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G06F 2212/251 (2013.01); H03K 19/20 (2013.01);
Abstract

A memory device, for executing an anneal computation with first state and a second state. The memory device includes a first memory array, a second memory array, a control circuit, a sensing circuit and a processing circuit. the control circuit selects a first horizontal row of memory units from the first memory array, and selects a second horizontal row of memory units from the second memory array. The sensing circuit computes a local energy value of the first state according to the current generated by the memory units of the first horizontal row, and computes a local energy value of the second state according to the current generated by the memory units of the second horizontal row. The processing circuit updates the first state and/or the second state according to the local energy value of the first state and the local energy value of the second state.


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