The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2023
Filed:
Dec. 03, 2019
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Shunsuke Noguchi, Hikone, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 1/04 (2006.01); G01N 1/32 (2006.01); G01N 23/205 (2018.01); G01N 23/2055 (2018.01); C30B 29/36 (2006.01); G01N 1/28 (2006.01);
U.S. Cl.
CPC ...
G01N 1/04 (2013.01); G01N 1/32 (2013.01); G01N 23/205 (2013.01); G01N 23/2055 (2013.01); C30B 29/36 (2013.01); G01N 2001/2873 (2013.01);
Abstract
A method of acquiring a sample for evaluation of a SiC single crystal, comprising: a step of cutting a SiC ingot in a radial direction at a thickness position, which is located in a range from a curved surface which forms a distal end surface in a crystal growth direction to a seed crystal, to obtain a head member which includes the curved surface, wherein the SiC ingot used in the step is a SiC ingot in which SiC thereof is crystal-grown from a seed crystal along a c axis direction; and a step of polishing a silicon surface of the head member to obtain a sample for evaluation.