The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Sep. 04, 2019
Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Yohei Fujikawa, Hikone, JP;

Assignee:

Resonac Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 23/06 (2006.01); C30B 23/02 (2006.01);
U.S. Cl.
CPC ...
C30B 35/002 (2013.01); C30B 23/025 (2013.01); C30B 23/066 (2013.01); C30B 35/007 (2013.01);
Abstract

The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.


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