The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Jan. 12, 2021
Applicant:
Winbond Electronics Corp., Taichung, TW;
Inventor:
Chang-Hung Lin, Chiayi, TW;
Assignee:
WINBOND ELECTRONICS CORP., Taichung, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 21/28123 (2013.01); H01L 21/764 (2013.01); H01L 29/4236 (2013.01); H01L 29/4991 (2013.01); H10B 12/053 (2023.02);
Abstract
A semiconductor structure includes a semiconductor substrate and a gate structure embedded in the semiconductor substrate. The gate structure includes a gate electrode layer, a barrier layer disposed over the gate electrode layer, and a semiconductor layer disposed over the barrier layer. The semiconductor structure also includes an air gap in the semiconductor substrate and exposing the barrier layer and the semiconductor layer.