The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Aug. 13, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Si-Woo Lee, Boise, ID (US);

Scott L. Light, Boise, ID (US);

Song Guo, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); G11C 5/063 (2013.01); H10B 12/0335 (2023.02); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract

A microelectronic device comprises semiconductive pillar structures each individually comprising a digit line contact region disposed laterally between two storage node contact regions. At least one semiconductive pillar structure of the semiconductive pillar structures comprises a first end portion comprising a first storage node contact region, a second end portion comprising a second storage node contact region, and a middle portion between the first end portion and the second end portion and comprising a digit line contact region, a longitudinal axis of the first end portion oriented at an angle with respect to a longitudinal axis of the middle portion. Related microelectronic devices, electronic systems, and methods are also described.


Find Patent Forward Citations

Loading…