The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Oct. 19, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Yusheng Bian, Ballston, NY (US);

Steven Shank, Jericho, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01); H01L 31/1872 (2013.01);
Abstract

A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.


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Jacob, Ajey. (2023). Fin-based photodetector structure (U.S. Patent No. 11810989). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11810989

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