The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Aug. 02, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Yongshun Sun, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Xinshu Cai, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 29/1083 (2013.01); H01L 29/161 (2013.01); H01L 29/66825 (2013.01);
Abstract
A nonvolatile memory device is provided. The nonvolatile memory device comprises an n-doped source, an n-doped drain, and a doped region in a first p-well in a substrate. A floating gate may be arranged over the first p-well, whereby the doped region may be arranged at least partially under the floating gate.
Quick Actions:
Sun, Yongshun. (2023). Nonvolatile memory device with a doped region between a source and a drain and integration schemes (U.S. Patent No. 11810982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11810982
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile