The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Jun. 28, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Chieh-Jen Ku, Hillsboro, OR (US);

Pei-Hua Wang, Beaverton, OR (US);

Bernhard Sell, Portland, OR (US);

Martin M. Mitan, Beaverton, OR (US);

Leonard C. Pipes, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/76829 (2013.01); H01L 27/0688 (2013.01); H01L 27/1259 (2013.01); H01L 29/6675 (2013.01); H01L 29/78618 (2013.01);
Abstract

Embodiments herein describe techniques for a transistor above a substrate. The transistor includes a channel layer above the substrate. The channel layer includes a first channel material of a first conductivity. In addition, the channel layer further includes elements of one or more additional materials distributed within the channel layer. The channel layer including the elements of the one or more additional materials has a second conductivity different from the first conductivity. Other embodiments may be described and/or claimed.


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