The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Mar. 01, 2022
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Haiyang Zhang, Shanghai, CN;

Panpan Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor structure and fabrication method are provided. The semiconductor structure includes a substrate, including a first region and a second region; a plurality of fins, formed on the first region of the substrate; a first isolation structure, formed on the first region between adjacent fins and on the second region of the substrate; a second isolation structure, formed in each fin and in the first isolation structure, over the first region of the substrate; and a power rail, formed in the isolation structure and partially in the substrate of the second region.


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