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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11810918 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

Dec. 07, 2020

Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tsung-Sheng Kang, Ballston Lake, NY (US);

Ardasheir Rahman, Schenectady, NY (US);

Tao Li, Albany, NY (US);

Su Chen Fan, Cohoes, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Samuel Waldbaum

Ryan, Mason & Lewis, LLP

Primary Examiner:

Michael M Trinh

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H03K 19/20 (2006.01); H01L 29/78 (2006.01); H03K 19/173 (2006.01); H01L 27/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823885 (2013.01); H01L 27/0688 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H03K 19/173 (2013.01); H03K 19/20 (2013.01); H01L 21/823871 (2013.01); H01L 29/42376 (2013.01);
Abstract

A semiconductor structure comprises two or more vertical fins, a bottom epitaxial layer surrounding a bottom portion of a given one of the two or more vertical fins, a top epitaxial layer surrounding a top portion of the given one of the two or more vertical fins, a shared epitaxial layer surrounding a middle portion of the given one of the two or more vertical fins, and a connecting layer contacting the bottom epitaxial layer and the top epitaxial layer, the connecting layer being disposed to a lateral side of the two or more vertical fins.

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