The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Nov. 23, 2020
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Jaber Derakhshandeh, Tienen, BE;

Eric Beyne, Heverlee, BE;

Gerald Peter Beyer, Heverlee, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 1/008 (2006.01); H01L 23/498 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); B23K 1/008 (2013.01); H01L 23/49811 (2013.01); H01L 24/06 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); B23K 2101/40 (2018.08); H01L 2224/0603 (2013.01); H01L 2224/06136 (2013.01); H01L 2224/06155 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14136 (2013.01); H01L 2224/14155 (2013.01); H01L 2224/14177 (2013.01); H01L 2224/14515 (2013.01); H01L 2224/14517 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17136 (2013.01); H01L 2224/17155 (2013.01); H01L 2224/17177 (2013.01); H01L 2224/17517 (2013.01); H01L 2224/8183 (2013.01); H01L 2224/8192 (2013.01); H01L 2224/81143 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81906 (2013.01); H01L 2224/81907 (2013.01);
Abstract

A method of bonding semiconductor components is described. In one aspect a first component, for example a semiconductor die, is bonded to a second component, for example a semiconductor wafer or another die, by direct metal-metal bonds between metal bumps on one component and corresponding bumps or contact pads on the other component. In addition, a number of solder bumps are provided on one of the components, and corresponding contact areas on the other component, and fast solidified solder connections are established between the solder bumps and the corresponding contact areas, without realizing the metal-metal bonds. The latter metal-metal bonds are established in a heating step performed after the soldering step. This enables a fast bonding process applied to multiple dies bonded on different areas of the wafer and/or stacked one on top of the other, followed by a single heating step for realizing metal-metal bonds between the respective dies and the wafer or between multiple stacked dies. The method allows to improve the throughput of the bonding process, as the heating step takes place only once for a plurality of dies and/or wafers.


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