The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Feb. 17, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Nan Wang, Shanghai, CN;
Abstract
A semiconductor device is provided. The semiconductor device includes a base substrate; and a first gate structure and doped source/drain layers on the base substrate. The doped source/drain layers are on both sides of the first gate structure. The semiconductor device further includes a dielectric layer on a surface of the base substrate. The dielectric layer covers the doped source/drain layers, and the dielectric layer contains a first trench on the doped source/drain layer. The first trench includes a first region filled by an insulation layer and a second region filled by first conductive structure under the insulation layer. A top size of the insulation layer in the first region is larger than a bottom size of the insulation layer in the first region. A maximum size of the first conductive structure in the second region is smaller than the bottom size of the insulation layer in the first region.