The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Oct. 27, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Shu Chen, Shanghai, CN;
Abstract
A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base, where the base includes first regions and a second region located between the first regions; forming a pattern definition layer on the base; forming discrete mask layers on the pattern definition layer, the mask layers and the base defining openings, where openings of the first regions serve as first openings, and an opening of the second region serves as a second opening; forming a filling layer in the second opening; and etching, using the mask layers and the filling layer as masks, the pattern definition layer exposed from the first openings, to form target patterns. In embodiments and implementations of this application, the filling layer is formed between the mask layers of the second region, to obtain a mask that finally etches the pattern definition layer, so that the formed target patterns meet process requirements, which is conducive to improving electrical performance of the semiconductor structure.