The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Feb. 25, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Yasushi Matsubara, Kanagawa, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/56 (2006.01); H10B 53/00 (2023.01); H10B 53/20 (2023.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2257 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/5657 (2013.01); H10B 53/00 (2023.02); H10B 53/20 (2023.02);
Abstract
A memory cell comprises first, second, third, and fourth transistors individually comprising a transistor gate. First and second ferroelectric capacitors individually have one capacitor electrode elevationally between the transistor gates of the first, second, third, and fourth transistors. Other memory cells are disclosed, as are arrays of memory cells.