The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Mar. 11, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A process manufacturing method, a method for adjusting a threshold voltage, a device, and a storage medium are provided. One form of a process manufacturing method includes: determining a type of to-be-formed MOS device and a corresponding threshold voltage interval; obtaining, according to a MOS device type and the corresponding threshold voltage interval, a corresponding threshold voltage adjustment process by querying a pre-configured first mapping relationship of the threshold voltage interval and a second mapping relationship of the threshold voltage interval; and establishing a process flow according to the corresponding threshold voltage adjustment process, the first mapping relationship being a mapping relationship between the threshold voltage interval and the MOS device type; and the second mapping relationship being a correspondence between the threshold voltage interval in the first mapping relationship and a threshold voltage adjustment process formed by at least one adjustment process selected from a preset process flow, the threshold voltage adjustment process causing a threshold voltage to be in the corresponding threshold voltage interval under the action of a total threshold voltage offset. According to the present disclosure, the difficulty in adjusting the threshold voltage is reduced.