logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11809079 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

May. 16, 2022

Photosensitive resin composition, polyimide production method, and semiconductor device

Applicant:

Asahi Kasei Kabushiki Kaisha, Tokyo, JP;

Inventors:

Tomohiro Yorisue, Tokyo, JP;

Yoshito Ido, Tokyo, JP;

Taihei Inoue, Tokyo, JP;

Harumi Matsuda, Tokyo, JP;

Assignee:

ASAHI KASEI KABUSHIKI KAISHA, Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

John S Chu

Int. Cl.
CPC ...
G03F 7/038 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); H01L 21/02 (2006.01); C08G 73/10 (2006.01); G03F 7/031 (2006.01); H01L 21/311 (2006.01); C08L 79/08 (2006.01); G03F 7/037 (2006.01); H01L 23/532 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0387 (2013.01); C08G 73/1071 (2013.01); C08L 79/08 (2013.01); G03F 7/031 (2013.01); G03F 7/037 (2013.01); G03F 7/0382 (2013.01); G03F 7/0388 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/311 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); G03F 7/2002 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract

A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4'-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl.

Find Patent Forward Citations

Loading…