The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2023
Filed:
Feb. 08, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Yasutaka Nakashiba, Tokyo, JP;
Shinichi Watanuki, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/132 (2006.01); G02B 6/12 (2006.01); G02B 6/125 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/125 (2013.01); G02B 6/132 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate; an insulating layer formed on the semiconductor substrate; an optical waveguide formed on the insulating layer, extending in a first direction in a plan view, and being made of silicon; and an interlayer insulating film formed on the insulating layer to cover the optical waveguide. In this case, a crystal surface of a side surface of the optical waveguide is a () surface.