The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
May. 05, 2019
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Min Zhong, Shanghai, CN;
Shoumian Chen, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
A transition metal dichalcogenide transistor, comprising: a gate, a gate dielectric layer and a channel layer from bottom to top, a source/drain region are located on both the sides of the gate dielectric layer, wherein, in a plane paralleled to the channel layer, the length of the channel layer in each direction is greater than the length of the gate dielectric layer, and the length of the gate dielectric layer in each direction is greater than or equal to the length of the gate; wherein, the source/drain region are a first transition metal dichalcogenide with metallic properties, and the channel layer is a second transition metal dichalcogenide with semiconductor properties. The present invention provides a transition metal dichalcogenide transistor and a preparation method thereof, which can solve a problem of excessive contact resistance between a transition metal dichalcogenide transistor channel and a source/drain region and can make the transition metal dichalcogenide transistor compatible with the existing CMOS process.