The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Dec. 21, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Alexander M. Derrickson, Saratoga Springs, NY (US);
Arkadiusz Malinowski, Dresden, DE;
Jagar Singh, Clifton Park, NY (US);
Mankyu Yang, Fishkill, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/165 (2013.01); H01L 29/66242 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to annular bipolar transistors and methods of manufacture. The structure includes: a substate material; a collector region parallel to and above the substrate material; an intrinsic base region surrounding the collector region; an emitter region above the intrinsic base region; and an extrinsic base region contacting the intrinsic base region.