The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Apr. 26, 2021
Applicants:
Flosfia Inc., Kyoto, JP;
National Institute for Material Science, Ibaraki, JP;
Inventors:
Yuichi Oshima, Ibaraki, JP;
Katsuaki Kawara, Kyoto, JP;
Assignees:
FLOSFIA INC., Kyoto, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02595 (2013.01); H01L 21/02609 (2013.01); H01L 29/247 (2013.01);
Abstract
A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-GaOand the second crystal is a single crystal of a crystalline oxide.