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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11804482 B1

PDFFull Text
Date of Patent:
Oct. 31, 2023

Filed:

Sep. 29, 2020

Transistor drain design for esd protection and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Sheng-Fu Hsu, Hsinchu, TW;

Hsiao-Ching Huang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT LAW

Anthony King

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/823493 (2013.01); H01L 29/0847 (2013.01); H01L 29/42356 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device comprises a substrate of a first type, a first doped region embedded within the substrate and having a first portion and a second portion, and a first gate electrode disposed above the substrate. The semiconductor device further comprises a well region of a second type and embedded within the substrate. The well region is in contact with the second portion of the first doped region.

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Hsu, Sheng-Fu. (2023). Transistor drain design for esd protection and manufacturing method thereof (U.S. Patent No. 11804482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11804482

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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