The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Sep. 13, 2021
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Yu-Ping Tsai, Kaohsiung, TW;
Ming-Chi Liu, Kaohsiung, TW;
Yu-Ting Lu, Kaohsiung, TW;
Kai-Chiang Hsu, Kaohsiung, TW;
Che-Ting Liu, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 21/565 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/295 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/25 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/24226 (2013.01); H01L 2224/2518 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/19102 (2013.01); H01L 2924/35121 (2013.01);
Abstract
A semiconductor package structure includes a semiconductor device with an active surface, a conductive pillar on the conductive pad, an adhesion strengthening layer, and an encapsulant in contact with the adhesion strengthening layer. The conductive pillar has a side surface and a top surface. The adhesion strengthening layer is conformally disposed on the side surface of the conductive pillar and the active surface of the semiconductor device.