The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Jan. 04, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazuhisa Osada, Tokyo, JP;

Yuki Yano, Tokyo, JP;

Satoru Ishikawa, Tokyo, JP;

Shohei Ogawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/047 (2006.01);
U.S. Cl.
CPC ...
H01L 23/047 (2013.01);
Abstract

An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.


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