The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2023

Filed:

Aug. 04, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zhi Qi Huang, Xuhui, CN;

Wei Lu Chu, Pudong, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G05F 3/26 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G05F 3/262 (2013.01); H03F 3/45269 (2013.01); H03F 3/45273 (2013.01);
Abstract

A memory device includes a voltage generator configured to generate a reference voltage for transmission to at least one component of the memory device. The voltage generator includes a first input to receive a first signal having a first voltage value. The voltage generator also includes a second input to receive a second signal having a second voltage value. The voltage generator further includes a first circuit configured to generate third voltage and a second circuit coupled to the first circuit to receive the third voltage value, wherein the second circuit receives the first signal and the second signal and is configured to utilize the third voltage value to facilitate comparison of the first voltage value and the second voltage value to generate an output voltage.


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