The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Mar. 10, 2022
Applicant:
Tokyo Ohka Kogyo Co., Ltd., Kawasaki, JP;
Inventors:
Ming-Yen Chung, Hsinchu, TW;
Masaru Takahama, Hsinchu, TW;
Assignee:
TOKYO OHKA KOGYO CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/02019 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01);
Abstract
A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), Rto Reach independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in Rto Ris 10 or greater
Chung, Ming-Yen. (2023). Silicon etching solution, silicon etching method, and method of producing silicon fin structure (U.S. Patent No. 11802240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11802240
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile