The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Sep. 13, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

I-Fan Chang, Tainan, TW;

Hung-Yueh Chen, Hsinchu, TW;

Rai-Min Huang, Taipei, TW;

Jia-Rong Wu, Kaohsiung, TW;

Yu-Ping Wang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/20 (2023.02); G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 11/161 (2013.01); H10N 50/80 (2023.02);
Abstract

A layout pattern of a magnetoresistive random access memory (MRAM) includes a first diffusion region and a second diffusion region extending along a first direction on a substrate, a first contact plug extending along a second direction from the first diffusion region to the second diffusion region on the substrate, a first gate pattern and a second gate pattern extending along the second direction adjacent to one side of the first contact plug, and a third gate pattern and a fourth gate pattern extending along the second direction adjacent to another side of the first contact plug.


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