The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

May. 17, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Anilkumar Chandolu, Boise, ID (US);

Indra V. Chary, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract

Some embodiments include a method of forming an integrated assembly. Laterally alternating first and second sacrificial materials are formed over a conductive structure, and then a stack of vertically alternating first and second levels is formed over the sacrificial materials. The first levels include first material and the second levels include insulative second material. Channel-material-openings are formed to extend through the stack and through at least some of the strips. Channel-material-pillars are formed within the channel-material-openings. Slits are formed to extend through the stack and through the sacrificial materials. The first sacrificial material is replaced with first conductive material and then the second sacrificial material is replaced with second conductive material. At least some of the first material of the stack is replaced with third conductive material. Some embodiments include integrated assemblies.


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