The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Aug. 28, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chen Chen, Taoyuan, TW;

Hang-Ting Lue, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 12/00 (2023.01); G11C 11/56 (2006.01); G11C 11/39 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02); G11C 11/39 (2013.01); G11C 11/5621 (2013.01); G11C 11/5671 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A memory structure is provided. The memory structure includes a first channel body, a first source region, a first drain region, a first gate structure and a second gate structure. The first source region has a first conductivity and connects to a first end of the first channel body. The first drain region has a second conductivity and connects to a second end of the first channel body separated from the first end. The first gate structure is disposed adjacent to the first channel body and between the first end and the second end. The second gate structure disposed adjacent to the first channel body and between the first end and the second end.


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