The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 20, 2022
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventor:

Michael A. Smith, Boise, ID (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/40 (2023.01); G11C 16/04 (2006.01); H01L 29/94 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); G11C 16/30 (2006.01); H01L 29/66 (2006.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); G11C 16/30 (2013.01); H01L 21/28061 (2013.01); H01L 29/4933 (2013.01); H01L 29/66181 (2013.01); H10B 41/40 (2023.02); H10B 43/40 (2023.02); G11C 16/0483 (2013.01);
Abstract

A semiconductor structure includes a capacitor structure comprising an active region comprising opposing field edges parallel to a first horizontal direction and a gate region comprising opposing gate edges parallel to a second horizontal direction transverse to the first horizontal direction. The semiconductor structure also comprises a first dielectric material adjacent at least one of the opposing field edges or the opposing gate edges and a second dielectric material adjacent the active area and abutting portions of the first dielectric material. A height of the second dielectric material in a vertical direction may be less than the height of the first dielectric material. Semiconductor devices and related methods are also disclosed.


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