The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Apr. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngtek Oh, Suwon-si, KR;

Jinwook Jung, Seongnam-si, KR;

Seunggeol Nam, Suwon-si, KR;

Wontaek Seo, Yongin-si, KR;

Insu Jeon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01);
Abstract

Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.


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