The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
May. 13, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Te-An Chen, Beitun, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device may include a first device on a first portion of a substrate, a second device on a second portion of the substrate, and a third device on a third portion of the substrate. The third device may include an oxide layer that is formed from an oxide layer that is a sacrificial oxide layer for the first device and the second device. The third device may include a gate provided on the oxide layer, a set of spacers provided on opposite sides of the gate, and a source region provided in the third portion of the substrate on one side of the gate. The third device may include a drain region provided in the third portion of the substrate on another side of the gate, and a protective oxide layer provided on a portion of the gate and a portion of the drain region.