The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jun. 09, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Pin-Dai Sue, Tainan, TW;

Tzung-Yo Hung, Chiayi County, TW;

Jung-Hsuan Chen, Hsinchu, TW;

Ting-Wei Chiang, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 23/528 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/8221 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes a first transistor disposed over a substrate, a second disposed over the first transistor, and a conductive trace. The first transistor includes a first active area extending on a first layer. The second transistor includes a second active area extending on a second layer above the first layer. The conductive trace extends on a third layer. The first to third layers are separated from each other in a first direction, and the third layer is interposed between the first and second layers. The first active area, the second active area, and the conductive trace overlap in a layout view.


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