The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
May. 05, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junyun Kweon, Cheonan-si, KR;
Jumyong Park, Cheonan-si, KR;
Jin Ho An, Seoul, KR;
Dongjoon Oh, Suwon-si, KR;
Jeonggi Jin, Seoul, KR;
Hyunsu Hwang, Siheung-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed are interconnection patterns and semiconductor packages including the same. The interconnection pattern comprises a first dielectric layer, a first interconnection pattern in the first dielectric layer, a first barrier layer between the first interconnection pattern and the first dielectric layer, a first top surface of the first barrier layer located at a level lower than that of a second top surface of the first dielectric layer and lower than that of a third top surface of the first interconnection pattern, a second barrier layer on the first barrier layer, the second barrier layer interposed between the first interconnection pattern and the first dielectric layer, a second dielectric layer on the first dielectric layer, the first interconnection pattern, and the second barrier layer, and a second interconnection pattern formed in the second dielectric layer and electrically coupled to the first interconnection pattern.