The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Oct. 15, 2021
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Christian Lew Arrington, Albuquerque, NM (US);

Amber Lynn Dagel, Lafayette, CO (US);

Patrick Sean Finnegan, Albuquerque, NM (US);

Andrew E. Hollowell, Albuquerque, NM (US);

Travis Ryan Young, Albuquerque, NM (US);

Kalin Baca, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/768 (2006.01); C25D 3/48 (2006.01); H01L 21/3063 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76847 (2013.01); C25D 3/48 (2013.01); H01L 21/3063 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01);
Abstract

A method is provided for making gratings of gold or other metal in silicon substrates. The disclosed method may achieve high aspect ratios. According to the disclosed method, a silicon wafer is through-etched. A seed layer of metal is vapor-deposited on one side of the wafer, and a layer of metal is electrodeposited on the seed layer. The electrodeposited metal plugs the trenches and provides a conductive surface for subsequent electrodeposition. The trenches are then filled by electrodeposition from within the trenches, so that the walls of the metal grating grow on the metal plugs.


Find Patent Forward Citations

Loading…