The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Oct. 01, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Tsuyoshi Tomoyama, Hiroshima, JP;
Keisuke Otsuka, Okayama, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); H10B 12/485 (2023.02); H10B 12/03 (2023.02);
Abstract
Methods for forming openings in conductive layers and using the same are described. An example method includes: forming a conductive layer; forming a first hard mask on the conductive layer; forming a second hard mask on the first hard mask; providing an opening through the first and second masks; and removing a surface of the conductive layer under the opening. The first hard mask may have hardness greater than hardness of the second hard mask.