The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Aug. 20, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Marcella Carissimi, Bergamo, IT;
Fabio Enrico Carlo Disegni, Spino d'adda, IT;
Chantal Auricchio, Milan, IT;
Cesare Torti, Pavia, IT;
Davide Manfre', Pandion, IT;
Laura Capecchi, Vedano al Lambro, IT;
Emanuela Calvetti, Villa d'Adda, IT;
Stefano Zanchi, Milan, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.